Magnetic sensitivity modeling of dual gate MOS transistor

In this paper, the magnetic field effect on carrier transport phenomenon in double gate metal-oxide-semiconductor field-effect transistor (MOSFET) has been investigated. This is done by exploring Lorentz force and behavior of a semiconductor subjected to constant field. The modulates electrons position density as well potential distribution case silicon tunnel tunneling field-effects (FETs). modulation impacts device electrical characteristics such ON current (I<sub>ON</sub>), subthreshold leakage (IOF), threshold voltage (V<sub>T</sub>), magneto-transconductance (g<sub>mm</sub>) output magneto-conductance (gm<sub>DS</sub>). addition, hall (V<sub>H</sub>) induced modulated It observed that influences effective applied voltage. variations paramount importance affects switching properties both speed power dissipation, noted VT (Ion/Iof) ratio are reduced 10<sup>-3</sup>V 10<sup>2</sup> for ±6 ±5.5 Tesla, respectively. We have simulated different channel, mainly doping concentration, distribution, conduction valence bands, total density, charge electric field, electron mobility, velocity.